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AFT05MS006Nt1 1 rf device data freescale semiconductor, inc. rf power ldmos transistor high ruggedness n--channel enhancement--mode lateral mosfet designed for handheld two--way radio applications with frequencies from 136 to 941 mhz. the high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. narrowband performance (7.5 vdc, i dq = 100 ma, t a =25 ? c, cw) frequency (mhz) g ps (db) ? d (%) p out (w) 520 (1) 18.3 73.0 6.0 wideband performance (7.5 vdc, t a =25 ? c, cw) frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 136?174 0.19 15.5 60.0 6.0 440--520 (2) 0.15 16.3 65.0 6.4 760--870 (3) 0.20 15.2 58.5 6.7 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 520 (1) cw > 65:1 at all phase angles 0.12 (3 db overdrive) 10.8 no device degradation 1. measured in 520 mhz narrowband test circuit. 2. measured in 440?520 mhz uhf broadband reference circuit. 3. measured in 760?870 mhz uhf broadband reference circuit. features ? characterized for operation from 136 to 941 mhz ? unmatched input and output allowing wide frequency range utilization ? integrated esd protection ? integrated stab ility enhancements ? wideband ? full power across the band ? exceptional thermal performance ? extreme ruggedness ? high linearity for: tetra, ssb ? in tape and reel. t1 suffix = 1,000 units, 16 mm tape width, 7--inch reel. typical applications ? output stage vhf band handheld radio ? output stage uhf band handheld radio ? output stage for 700?800 mhz handheld radio document number: AFT05MS006N rev. 0, 2/2014 freescale semiconductor technical data 136?941 mhz, 6.0 w, 7.5 v wideband rf power ldmos transistor AFT05MS006Nt1 pld--1.5w figure 1. pin connections note: the center pad on the backside of the package is the source terminal for the transistor. drain gate ? freescale semiconductor, inc., 2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT05MS006Nt1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +30 vdc gate--source voltage v gs --6.0, +12 vdc operating voltage v dd 12.5, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +150 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 125 1.0 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 ? c, 6.0 w cw, 7.5 vdc, i dq = 100 ma, 520 mhz r ? jc 1.0 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 150 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =7.5vdc,v gs =0vdc) i dss ? ? 2 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 600 nadc on characteristics gate threshold voltage (v ds =10vdc,i d =78 ? adc) v gs(th) 1.8 2.2 2.6 vdc drain--source on--voltage (v gs =10vdc,i d =0.78adc) v ds(on) ? 0.15 ? vdc forward transconductance (v ds =7.5vdc,i d =4.7adc) g fs ? 4.4 ? s 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
AFT05MS006Nt1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =7.5vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.7 ? pf output capacitance (v ds =7.5vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 47 ? pf input capacitance (v ds =7.5vdc,v gs =0vdc ? 30 mv(rms)ac @ 1 mhz) c iss ? 75 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =7.5vdc,i dq = 100 ma, p in = 19.5 dbm, f = 520 mhz common--source amplifier output power p out ? 6.0 ? w drain efficiency ? d ? 73.0 ? % load mismatch/ruggedness (in freescale test fixture, 50 ohm system) i dq = 100 ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 520 cw > 65:1 at all phase angles 0.12 (3 db overdrive) 10.8 no device degradation
4 rf device data freescale semiconductor, inc. AFT05MS006Nt1 typical characteristics 160 10 9 90 10 7 10 6 100 120 130 mttf (hours) 140 150 10 5 10 8 t j , junction temperature ( ? c) note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. v dd =7.5vdc 2 1 100 08 4 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 12 c iss 10 10 c oss measured with ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc c rss 6 figure 3. mttf versus junction temperature ? cw i d =0.86amps 1.1 amps 1.32 amps 110
AFT05MS006Nt1 5 rf device data freescale semiconductor, inc. 520 mhz narrowband production test fixture figure 4. AFT05MS006Nt1 narrowband test circuit component layout ? 520 mhz b1 c1 c2 c3 c4 c8 r6 r1 r2 r3 r4 r5 c9 c5 c6 c7 l1 l2 c15 c16 c10 c17 c14 c13 c12 c11 AFT05MS006N rev. 0 d53508 v dd v gg table 6. AFT05MS006Nt1 narrowband test circui t component designations and values ? 520 mhz part description part number manufacturer b1 short rf bead 2743019447 fair--rite c1 22 ? f, 35 v tantalum capacitor t491x226k035at kemet c2, c13 0.1 ? f chip capacitors cdr33bx104akws avx c3, c12 0.01 ? f chip capacitors c0805c103k5rac kemet c4, c11 180 pf chip capacitors atc100b181jt300xt atc c5 9.1 pf chip capacitor atc100b9r1ct500xt atc c6, c7 15 pf chip capacitors atc100b150jt500xt atc c8, c9 27 pf chip capacitors atc100b270jt500xt atc c10 2.7 pf chip capacitor atc100b2r7bt500xt atc c14 330 ? f, 35 v electrolytic capacitor mcgpr35v337m10x16--rh multicomp c15, c16 20 pf chip capacitors atc100b200jt500xt atc c17 16 pf chip capacitor atc100b160jt500xt atc l1 8.0 nh, 3 turn inductor a03tklc coilcraft l2 5 nh, 2 turn inductor a02tklc coilcraft r1, r2, r3, r4, r5 1.5 ? , 1/4 w chip resistors rc1206fr--071r5l yageo r6 27 ? , 1/4 w chip resistor crcw120627r0fkea vishay pcb rogers ro4350b, 0.030 ? , ? r =3.66 d53508 mtl
6 rf device data freescale semiconductor, inc. AFT05MS006Nt1 z1 0.328 ?? 0.080 ? microstrip z2 0.490 ?? 0.120 ? microstrip z3 0.055 ?? 0.320 ? microstrip z4 0.190 ?? 0.320 ? microstrip z5 0.365 ?? 0.320 ? microstrip z6 0.160 ?? 0.320 ?? 0.620 ? taper microstrip z7 0.045 ?? 0.620 ? microstrip z8 0.332 ?? 0.620 ? microstrip z9 0.055 ?? 0.620 ? microstrip z10 0.243 ?? 0.620 ? microstrip z11 0.692 ?? 0.620 ? microstrip z12 0.045 ?? 0.620 ? microstrip z13 0.162 ?? 0.320 ?? 0.620 ? taper microstrip z14 0.319 ?? 0.320 ? microstrip z15 0.115 ?? 0.320 ? microstrip z16 0.222 ?? 0.120 ? microstrip z17 0.443 ?? 0.120 ? microstrip z18 0.238 ?? 0.080 ? microstrip figure 5. AFT05MS006Nt1 narrowband test circuit schematic ? 520 mhz table 7. AFT05MS006Nt1 narrowband test circuit microstrips ? 520 mhz description microstrip rf input rf output r6 z4 z3 c5 z1 z2 z5 z7 z10 z9 l2 v supply v bias z12 z11 z13 c17 z14 c2 c3 c6 c11 c12 c13 c1 + c7 c14 + z6 c8 c9 z8 c15 c16 z15 l3 z16 c10 z17 z18 c4 r1 r2 r3 r4 r5 description microstrip b1 dut
AFT05MS006Nt1 7 rf device data freescale semiconductor, inc. typical characteristics ? 520 mhz narrowband reference circuit p out , output power (watts) 0 01234 2 1 3 p out , output power (watts) 4 5 0.5 1.5 2.5 3.5 4.5 7 v dd =7.5vdc,f=520mhz p in = 17.75 dbm v gs , gate--source voltage (volts) figure 6. output power versus gate--source voltage figure 7. power gain, drain efficiency and output power versus input power p in , input power (watts) g ps , power gain (db) 0 6 3 0 ? d g ps 30 50 40 10 20 15 12 9 18 60 70 80 0.02 ? d , drain efficiency (%) p out v dd =7.5vdc,i dq = 100 ma f = 520 mhz p in = 14.75 dbm 6 21 24 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 90 v dd =7.5vdc,i dq = 100 ma, p out =6.0wavg. f mhz z source ? z load ? 520 1.14 + j2.28 1.78 + j1.71 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 8. narrowband series equivalent source and load impedance ? 520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
8 rf device data freescale semiconductor, inc. AFT05MS006Nt1 440?520 mhz uhf bro adband reference circuit table 8. 440?520 mhz uhf broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5volts,i dq = 100 ma, t a =25 ? c, cw frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 440 0.13 16.7 63.7 5.9 480 0.08 18.6 68.5 6.1 520 0.11 17.5 73.1 6.0 table 9. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 480 cw > 65:1 at all phase angles 0.19 (3 db overdrive) 10.8 no device degradation
AFT05MS006Nt1 9 rf device data freescale semiconductor, inc. 440?520 mhz uhf bro adband reference circuit figure 9. AFT05MS006Nt1 uhf br oadband reference c ircuit component layout ? 440?520 mhz l3 l1 l2 l4 l5 l6 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 gnd v dd v dp r1 q1 b1 j1 d49947 AFT05MS006N rev. 0 table 10. AFT05MS006Nt1 uhf broadba nd reference circuit component designations and values ? 440?520 mhz part description part number manufacturer b1 30 ? , 6 a ferrite bead mpz2012s300a fair-rite c1 18 pf chip capacitor atc600f180jt250xt atc c2, c3, c11 15 pf chip capacitors atc600f150jt250xt atc c4 56 pf chip capacitor atc600f560jt250xt atc c5 100 pf chip capacitor atc600f100jt250xt atc c6, c7 0.1 ? f chip capacitors grm21br71h104ka01b murata c8 0.01 ? f chip capacitor grm21br72a103ka01b murata c9 240 pf chip capacitor atc600f241jt250xt atc c10 2.2 ? f chip capacitor grm31cr71h225ka88l murata c12 39 pf chip capacitor atc600f390jt250xt atc c13 18 pf chip capacitor atc600f180jt250xt atc c14 5.1 pf chip capacitor atc600f5r1bt250xt atc c15 100 pf chip capacitor atc600f101jt250xt atc j1 right-angle breakaway headers (3 pins) 22-28-8360 molex l1 5.5 nh inductor 0806sq5n5 coilcraft l2 6 nh inductor 0806sq6n0 coilcraft l3, l4 16.6 nh inductors 0908sq17n coilcraft l5 1.65 nh inductor 0906-2jlc coilcraft l6 8.1 nh inductor 0908sq8n1 coilcraft q1 rf power ldmos transistor AFT05MS006Nt1 freescale r1 20 ? , 1/4 w chip resistor crcw120620r0fkea vishay pcb 0.020 ? , ? r = 4.8, shengyi s1000-2 d49947 mtl
10 rf device data freescale semiconductor, inc. AFT05MS006Nt1 figure 10. AFT05MS006Nt1 uhf broadband reference circuit schematic ? 440--520 mhz table 11. AFT05MS006Nt1 uhf broadband reference circuit microstrips ? 440--520 mhz description microstrip description microstrip z15 0.235 ?? 0.049 ? microstrip z16 0.163 ?? 0.046 ? microstrip z17 0.065 ?? 0.046 ? microstrip z18 0.079 ?? 0.044 ? microstrip z19 0.056 ?? 0.044 ? microstrip z20 0.060 ?? 0.034 ? microstrip z1 0.060 ?? 0.034 ? microstrip z2 0.052 ?? 0.046 ? microstrip z3 0.105 ?? 0.046 ? microstrip z4 0.124 ?? 0.046 ? microstrip z5 0.127 ?? 0.044 ? microstrip z6 0.093 ?? 0.044 ? microstrip z7 0.253 ?? 0.044 ? microstrip z8 0.123 ?? 0.300 ? microstrip z9 0.029 ?? 0.300 ? microstrip z10 0.070 ?? 0.146 ? microstrip z11 0.070 ?? 0.146 ? microstrip z12 0.153 ?? 0.170 ? microstrip z13 0.094 ?? 0.170 ? microstrip z14 0.120 ?? 0.049 ? microstrip description microstrip rf input c6 v bias v supply c10 rf output c15 z20 z19 l4 c9 c8 c7 z12 c5 z4 z3 c1 z2 z1 l1 c2 l2 z5 c3 z6 c4 z7 z9 r1 b1 z10 z11 z13 z14 z15 z16 c12 z17 l5 z18 l3 l6 c14 c11 c13 z8 dut
AFT05MS006Nt1 11 rf device data freescale semiconductor, inc. typical characteristics ? 440--520 mhz uhf broadband reference circuit 420 g ps f, frequency (mhz) figure 11. power gain, drain efficiency and output power versus frequency at a constant input power 12 20 5 90 80 70 60 8 7 6 ? d , drain efficiency (%) ? d g ps , power gain (db) 19 17 13 460 500 520 50 p out ,output power (watts) v dd =7.5vdc p in =0.15w i dq = 100 ma p out 18 16 15 14 480 440 540 0 0 v gs , gate--source voltage (volts) figure 12. output power versus gate--source voltage 12 1 2 3 4 10 2 8 4 p out , output power (watts) f = 480 mhz v dd =7.5vdc,p in =0.08w 0 0 detail a 1 2 f = 480 mhz detail a v dd =7.5vdc p in =0.08w p out , output power (watts) v gs , gate--source voltage (volts) 6 v dd =7.5vdc,p in =0.16w 0.2 v dd =7.5vdc p in =0.16w 2.5 1.5 0.5 0.4 0.6 0.8 1.2 1.0 5 figure 13. power gain, drain efficiency and output power versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 15 14 0.01 1 g ps 8 10 0 4 18 17 16 19 40 70 80 0.1 p out v dd =7.5vdc i dq = 100 ma 13 520 mhz 480 mhz 440 mhz 440 mhz 520 mhz 480 mhz ? d 480 mhz 520 mhz p out ,output power (watts) 20 21 11 10 60 50 30 6 2 ? d , drain efficiency (%)
12 rf device data freescale semiconductor, inc. AFT05MS006Nt1 440--520 mhz uhf broadband reference circuit z o =10 ? z source z load f = 440 mhz f = 520 mhz f = 520 mhz f = 440 mhz v dd =7.5vdc,i dq = 100 ma, p out =6wavg. f mhz z source ? z load ? 440 2.46 + j3.15 3.80 + j3.27 450 2.30 + j3.23 3.70 + j2.77 460 2.11 + j3.35 3.69 + j2.66 470 1.90 + j3.48 3.60 + j2.61 480 1.71 + j3.72 3.54 + j2.68 490 1.56 + j4.01 3.50 + j2.78 500 1.43 + j4.37 3.46 + j2.92 510 1.33 + j4.75 3.42 + j3.09 520 1.28 + j5.10 3.37 + j3.22 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. uhf broadband series equivalent source and load impedance ? 440--520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
AFT05MS006Nt1 13 rf device data freescale semiconductor, inc. 760--870 mhz uhf broadband reference circuit table 12. 760--870 mhz uhf broadband performance (in freescale reference circuit, 50 ohm system) v dd =7.5volts,i dq = 100 ma, t a =25 ? c, cw frequency (mhz) p in (w) g ps (db) ? d (%) p out (w) 760 0.12 16.6 50.4 6.0 815 0.13 16.1 58.1 6.0 870 0.16 15.0 60.0 6.0 table 13. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 815 cw > 65:1 at all phase angles 0.4 (3 db overdrive) 9.0 no device degradation
14 rf device data freescale semiconductor, inc. AFT05MS006Nt1 760--870 mhz uhf broadband reference circuit figure 15. AFT05MS006Nt1 uhf broadband refere nce circuit component layout ? 760--870 mhz d55295 c1 c3 c6 c5 c4 r1 b1 c9 j1 c10 b2 l1 c11 c12 c13 c16 c15 c14 q1 c2 c8 c7 table 14. AFT05MS006Nt1 uhf broadband reference cir cuit component designations and values ? 760--870 mhz part description part number manufacturer b1, b2 rf beads 2743019447 fair--rite c1, c5, c6, c7, c8 20 pf chip capacitors gqm2195c2e200gb12d murata c2 8.2 pf chip capacitor gqm2195c2e8r2bb12d murata c3 10 pf chip capacitor gqm2195c2e100fb12d murata c4, c13 56 pf chip capacitors gqm2195c2e560gb12d murata c9 1 ? f chip capacitor grm31mr71h105ka88l murata c10 10 ? f chip capacitor grm31cr61h106ka12l murata c11, c12 15 pf chip capacitors gqm2195c2e150fb12d murata c14, c15 5.6 pf chip capacitors gqm2195c2e5r6bb12d murata c16 100 pf chip capacitor gqm2195c2e101gb12d murata j1 right--angle breakaway headers (3 pins) 22--28--8360 molex l1 22 nh air core inductor 0908sq--22njl coilcraft q1 rf power ldmos transistor AFT05MS006Nt1 freescale r1 200 ? , 1/8 w chip resistor crcw0805200rjnea vishay pcb 0.020 ? , ? r =4.8,fr4 d55295 mtl
AFT05MS006Nt1 15 rf device data freescale semiconductor, inc. z1 0.150 ?? 0.050 ? microstrip z2 0.155 ?? 0.034 ? microstrip z3 0.430 ?? 0.034 ? microstrip z4 0.065 ?? 0.034 ? microstrip z5 0.040 ?? 0.250 ? microstrip z6 0.222 ?? 0.250 ? microstrip z7 0.130 ?? 0.250 ? microstrip figure 16. AFT05MS006Nt1 uhf broadband reference circuit schematic ? 760--870 mhz table 15. AFT05MS006Nt1 uhf broadband reference circuit microstrips ? 760--870 mhz description microstrip description microstrip description microstrip rf input v gs v dd c13 rf output z19 c16 z14 c4 z4 z3 c1 z2 z1 c2 z5 z6 c3 z7 c6 z8 r1 z15 c12 z16 z17 z18 c8 c7 z9 b1 c9 z11 z12 l1 b2 c10 c14 c15 z8 0.027 ?? 0.250 ? microstrip z9 0.066 ?? 0.034 ? microstrip z10 0.386 ?? 0.034 ? microstrip z11 0.027 ?? 0.180 ? microstrip z12 0.160 ?? 0.034 ? microstrip z13 0.350 ?? 0.034 ? microstrip z14 0.210 ?? 0.180 ? microstrip z15 0.215 ?? 0.180 ? microstrip z16 0.065 ?? 0.034 ? microstrip z17 0.430 ?? 0.034 ? microstrip z18 0.120 ?? 0.034 ? microstrip z19 0.150 ?? 0.050 ? microstrip z10 c5 z13 c11 dut
16 rf device data freescale semiconductor, inc. AFT05MS006Nt1 typical characteristics ? 760?870 mhz uhf broadband reference circuit 740 g ps f, frequency (mhz) figure 17. power gain, drain efficiency and output power versus frequency at a constant input power 10 19 18 6 66 63 60 57 10 9 8 ? d , drain efficiency (%) ? d g ps , power gain (db) 17 16 15 14 13 12 11 760 780 800 820 840 860 880 54 7 p out ,output power (watts) v dd =7.5vdc,p in =0.20w i dq = 100 ma p out 00.4 0 0 v gs , gate--source voltage (volts) figure 18. output power versus gate--source voltage 1 23 5 1 4 2 p out , output power (watts) f = 815 mhz v dd =7.5vdc,p in =0.20w detail a v dd =7.5vdc p in =0.10w p out , output power (watts) v gs , gate--source voltage (volts) 3 7 v dd =7.5vdc,p in =0.10w v dd =7.5vdc p in =0.20w 0 0.2 0.4 0.6 0.3 0.5 0.1 3.5 2.5 1.5 0.5 f = 815 mhz detail a 0.7 2 1.6 1.2 0.8 6 figure 19. power gain, drain efficiency and output power versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 15 14 0.004 g ps 8 25 0 4 18 17 16 21 65 85 p out v dd =7.5vdc i dq = 100 ma 13 ? d 815 mhz ? d , drain efficiency (%) p out ,output power (watts) f = 870 mhz 19 20 12 16 45 5 760 mhz 815 mhz 870 mhz 760 mhz 760 mhz 815 mhz 870 mhz 0.01 0.1 1
AFT05MS006Nt1 17 rf device data freescale semiconductor, inc. 760--870 mhz uhf broadband reference circuit z o =2 ? z source z load f = 760 mhz f = 870 mhz f = 760 mhz f = 870 mhz v dd =7.5vdc,i dq = 100 ma, p out =6wavg. f mhz z source ? z load ? 760 1.42 + j1.30 1.72 - j0.24 770 1.37 + j1.21 1.65 - j0.11 780 1.21 + j1.16 1.53 + j0.08 790 1.10 + j1.17 1.46 + j0.25 800 1.09 + j1.19 1.49 + j0.38 810 1.17 + j1.24 1.61 + j0.47 820 1.33 + j1.27 1.82 + j0.50 830 1.42 + j1.22 1.99 + j0.46 840 1.35 + j1.14 1.99 + j0.48 850 1.12 + j1.10 1.84 + j0.56 860 0.90 + j1.08 1.69 + j0.66 870 0.77 + j1.10 1.62 + j0.73 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 20. uhf broadband series equivalent source and load impedance ? 760--870 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
18 rf device data freescale semiconductor, inc. AFT05MS006Nt1 figure 21. pcb pad layout for pld--1.5w (7.11) 0.28 (4.91) 0.165 (3.94) 0.155 (2.26) 0.089 (2.16) 0.085 solder pad with thermal via structure. (mm) inches figure 22. product marking a 5m06 n( )b yyww
AFT05MS006Nt1 19 rf device data freescale semiconductor, inc. package dimensions
20 rf device data freescale semiconductor, inc. AFT05MS006Nt1
AFT05MS006Nt1 21 rf device data freescale semiconductor, inc.
22 rf device data freescale semiconductor, inc. AFT05MS006Nt1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 feb. 2014 ? initial release of data sheet
AFT05MS006Nt1 23 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT05MS006N rev. 0, 2/2014

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